Non-Thermal-Equilibrium Solid-Phase Crystallization of GeSn-on-Insulator on Si Platform

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289089
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: MIYAO Masanobu 九州大学, システム情報科学研究科(研究院, 特任教授 (60315132)
• Co-Investigator(Kenkyū-buntansha): SADOH Taizoh 九州大学, 大学院システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 電気・電子材料 / 半導体 / Ｓｉ系ヘテロ半導体

Outline of Final Research Achievements

To improve performance of Si large-scale integrated circuits by employing high-performance GeSn devices, non-thermal equilibrium growth process of GeSn with Sn concentration exceeding the solid-solubility of Sn in Ge has been investigated. On the basis of the results, a technique for lateral growth of GeSn on insulator is developed. As a result, Ge-on-insulator structures with high Sn concentration (≧8%) are achieved on Si platform.

Free Research Field

工学