2015 Fiscal Year Final Research Report
Study on novel isoelectronic traps in GaAs and control of their optical properties for the development of advanced quantum light source
| Project/Area Number |
25289091
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SAKUMA Yoshiki 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, グループリーダー (60354346)
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| Co-Investigator(Kenkyū-buntansha) |
IKEZAWA MICHIO 筑波大学, 数理物質科学研究科, 准教授 (30312797)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | 量子閉じ込め / 単一不純物 / 励起子 / 単一光子 / 等電子トラップ / フォトニック結晶 / パーセル効果 / MOCVD |
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| Outline of Final Research Achievements |
To make single-photon sources with identical emission energy and intensity, a research on controlling the optical properties of nitrogen (N) isoelectronic impurities, which were doped in GaAs, has been done. We clarified that the emission energy of N isoelectronic traps can be varied by using AlGaAs/GaAs:N/AlGaAs quantum well structures. In addition, we also demonstrated that the spontaneous emission rate from the N isoelectronic trap embedded in an L3-type microcavity within photonic crystal is enhanced by Purcell effect.
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| Free Research Field |
結晶工学、応用物理学、
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