Development of green-to-yellow semiconductor laser of high reliability using beryllium chalcogenide

2016 Fiscal Year Final Research Report

• Project/Area Number: 25289092
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: AKIMOTO RYOICHI 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 上級主任研究員 (30356349)
• Research Collaborator: FENG Jijun University of Shanghai for Science and Technology, School of Optical-Electrical and Computer Engineering, 教授
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 半導体レーザー / 量子井戸 / II-VI族半導体 / ベリリウムカルコゲナイド

Outline of Final Research Achievements

Low threshold current green-to-yellow BeZnCdSe single quantum-well (SQW) laser diodes (LDs) have been developed. The waveguide was formed of a ridge structure with etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, and then covered with a thick SiO2 layer and planarized with chemical-mechanical polishing and reactive ion etching process. A 535-nm green laser with 7-nm-thick SQW showed a threshold current and voltage of 7.07 mA and 7.89 V for a cavity width of 4 μm and length of 300 μm. A 563-nm yellow LD with 4-nm-thick SQW was also developed with 7.4-mA and 8.48-V threshold current and voltage for a 3-μm-wide, 300-μm-long cavity.　The threshold current in these devices was decreased to 1/10 to 1/5, compared with our previous devices. Thus the device performance can be significantly improved with much lower power consumption.

Free Research Field

光エレクトロニクス