High-performance organic transistors and circuits manufactured using nano-hetero self-assembled monolayer gate dielectrics

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289095
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Osaka University (2014-2015); The University of Tokyo (2013)
• Principal Investigator: Sekitani Tsuyoshi 大阪大学, 産業科学研究所, 教授 (80372407)
• Co-Investigator(Renkei-kenkyūsha): Uemura Takafumi 大阪大学, 産業科学研究所, 特任准教授 (30448097) ; Araki Teppei 大阪大学, 産業科学研究所, 助教 (10749518) ; Yoshimoto Shusuke 大阪大学, 産業科学研究所, 助教 (80755463)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 有機トランジスタ / フレキシブルデバイス / 自己組織化単分子膜

Outline of Final Research Achievements

We have realized the manufacturing process of high-performance, high-yield organic field-effect transistors using nano-hetero structure based self-assembled monolayer gate dielectrics (SAM). The organic transistors manufactured on 5-micrometer flexible substrates exhibited mobility greater than 1 cm2/Vs with low-operation voltages (<2 V). Furthermore, taking full advantages of the transistors with very small device-to-device non-uniformity, we have developed signal amplifier and ring-oscillators. The proposed organic transistors with using nano-hetero structure based SAM were used for constructing an array of active matrix amplifier, whose amplifier gain is more than 55 dB, and amplified bio-signals, indicating excellent feasibility of the transistors developed in this work. This work has been published in Nature Communications.

Free Research Field

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