Research on high-precision charge transfer using dopant atoms in silicon

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289098
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: University of Toyama
• Principal Investigator: Ono Yukinori 富山大学, 大学院理工学研究部(工学), 教授 (80374073)
• Co-Investigator(Kenkyū-buntansha): HORI Masahiro 静岡大学, 電子工学研究所, 講師 (50643269) ; Tsuchiya Toshiaki 島根大学, 総合理工学研究科, 教授 (20304248)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: チャージポンピング / ドナー / 単一電子転送

Outline of Final Research Achievements

In order to realize high-precision charge transfer, we have performed three basic experiments, and obtained the following results. First, we have developed the method that enables us to monitor the electron-hole recombination process in time domain. Using the method, cross-sections for electron and hole captures were successfully obtained. Next, we investigated the electron-hole recombination via single interface defects, and found that the single defects could convey two electrons for one cycle of the charge pumping procedure. This strongly suggests that the existing Shockley Read Hall (SRH) theory for the recombination does not hold true. In addition, we have investigated, using electron spin resonance, the spin states of shallow donors, phosphorus, arsenic, and antimony, and found that only arsenic exhibited imperfect formation of the paramagnetic state.

Free Research Field

ナノエレクトロニクス