Realization of very low power dissipation logic circuit device by using Datta-Das spin-FET

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289100
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Osaka Institute of Technology (2015); Japan Advanced Institute of Science and Technology
• Principal Investigator: Yamada Syoji 大阪工業大学, 教育センター, 教授 (00262593)
• Co-Investigator(Kenkyū-buntansha): Tsuchiya Takuma 北海道大学, 工学(系)研究科(研究院), 准教授 (40262597) ; Akabori Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 准教授 (50345667)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: スピンバルブ素子 / 強磁性電極 / スピンFET論理回路

Outline of Final Research Achievements

In this study, based on the results obtained in former spin-valve device (close to spin-FET)measurements (high spin injection efficiency, 11 %, and long spin diffusion length, over 5 maivcro-m), we have studied several problems toward the realization of spin-FET as well as spin-FET based Inverter devices. Most difficult problems are found in the device fabrication　process　such　as　making　ferromagnetic　electrode　with　reliable　magnetic properties on the InGaAs hetero-junction surfaces　and top-gates via Al2O3 insulator film. As a result, we have succeeded to make spin valve, spin-FET and prototype spin-Inverter devices.

Free Research Field

半導体物理学、半導体工学