Development of an Atomistic Device Simulatior by High Performance Computer

2016 Fiscal Year Final Research Report

• Project/Area Number: 25289102
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kobe University
• Principal Investigator: Ogawa Matsuto 神戸大学, 工学(系)研究科(研究院), 教授 (40177142)
• Co-Investigator(Kenkyū-buntansha): 相馬 聡文 神戸大学, 工学(系)研究科(研究院), 准教授 (20432560)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: ナノデバイスシミュレーション / 非平衡グリーン関数法 / 第一原理計算 / 強束縛近似法 / 電界効果型トランジスタ / 原子膜デバイス

Outline of Final Research Achievements

Since the miniturization of FETs (field effect transistor) is accelerated year by year, the size of an FET in 2020 will become as small as 11 nm, which is comprised of several thousand of atoms. In such small-scaled transistor, wave nature of electrons plays an important roles, in addition, the characteristics of atoms have to be taken into account in order to design and fabricate these devices.
We have developed a simulator, which can be used on K-computer, where the device physics can be taken into account on the basis of quantum physics as well as first principles calculation.

Free Research Field

半導体電子工学