Low temperature crystallization of Si by metal-induced crystallization method

2016 Fiscal Year Final Research Report

• Project/Area Number: 25289231
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Shibaura Institute of Technology
• Principal Investigator: Kyuno Kentaro 芝浦工業大学, 工学部, 教授 (40251467)
• Co-Investigator(Renkei-kenkyūsha): KAMIKO Masao 東京大学, 生産技術研究所, 助教 (80334366)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 構造・機能材料 / 表面・界面物性 / 半導体物性 / 結晶成長

Outline of Final Research Achievements

Low temperature crystallization of semiconductor materials by metal-induced crystallization has been studied. It is found that by depositing Si on a heated substrate covered with Al or codepositing Au and Ge on a heated substrate, crystallization can be achieved at lower temperatures than conventional methods. Moreover, it is found that it is possible to activate dopants during crystallization by adding dopants in metal catalysts.

Free Research Field

材料物性