Novel processing of functional semiconductor surfaces in meso-macro scale by utilizing self-organized structures

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289263
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Material processing/Microstructural control engineering
• Research Institution: Kogakuin University
• Principal Investigator: Ono Sachiko 工学院大学, 公私立大学の部局等, 研究員 (90052886)
• Co-Investigator(Kenkyū-buntansha): ASOH Hidetaka 工学院大学, 先進工学部, 准教授 (80338277)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 材料加工・処理 / 半導体微細加工 / 薄膜プロセス / ナノ・マイクロ科学

Outline of Final Research Achievements

In this study, we fabricated ordered pore arrays and pillar/wire arrays in meso-macro scale with a high-aspect-ratio in GaAs and InP substrates by a combination of sphere photolithography, (metal assisted) chemical etching, anodic etching and anodic oxidation and evaluated their device characteristics. We also investigated the effects of etchant composition on the orientation-dependent surface morphology of GaAs during anisotropic chemical etching using various types of etchants. Obtained results indicated that etching rates for each crystal plane were strongly affected by the type and concentration of oxidants.

Free Research Field

表面化学，電気化学，無機材料化学