2017 Fiscal Year Final Research Report
Effect of Concentrated Light Irradiation on Hall Mobility of Si and GaAs Substrates for solar cell application
| Project/Area Number |
25289360
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Energy engineering
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| Research Institution | University of Miyazaki |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
福山 敦彦 宮崎大学, 工学部, 教授 (10264368)
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| Project Period (FY) |
2013-04-01 – 2018-03-31
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| Keywords | 集光多接合型太陽電池 / 変換効率 / キャリア輸送 / ホール移動度 |
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| Outline of Final Research Achievements |
We carried out the Hall measurement of Si and GaAs under the concentrated light irradiation to discuss the effect of large amount of carrier generation. The Hall mobility of all samples decreased linearly with increasing the sunlight concentration. It was also found that these decrease could prevent by using a sample with high doping concentration. From the comparison with the numerical calculation, we concluded that the reduction of Hall mobility was due to increase of the two kinds of photo-generated carriers (electron and hole). Calculation of Hall mobility as a function of impurity doping concentration demonstrated that a suitable doping concentration for Si solar cell use was considered to be 1016 cm-3 under 16-suns concentrated irradiation. On the other hand, the Hall mobility of GaAs did not change even a 16-suns concentration irradiation. It can be explained that the Hall mobility was not affected by large amount of carrier generation due to its high electron mobility.
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| Free Research Field |
エネルギー工学
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