Self-assemmbly of ideal quantum dots by droplet epitaxy

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390011
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Nanostructural physics
• Research Institution: National Institute for Materials Science
• Principal Investigator: Mano Takaaki 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
• Co-Investigator(Renkei-kenkyūsha): KURODA Takashi 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主席研究員 (00272659) ; OHTAKE Akihiro 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 (30267398)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 量子ドット / 分子線エピタキシー / 自己形成 / もつれ光子対 / 量子通信 / ガリウム砒素

Outline of Final Research Achievements

We studied self-assembly of highly symmetric quantum dots (QDs) by droplet epitaxy for the application to high quality entangled photon emission. We investigated the details of Ga droplet formation and found out the nucleation process, which is important for control the droplet density and size. We also established the impurity doping on GaAs (111)A. By realizing both n- and p-type doping using Si, we succeeded in light emission from the highly symmetric QDs by current injection. In addition, we successfully formed highly symmetric InAs QDs, which emit light at telecom wavelengths.

Free Research Field

半導体結晶成長