InP-based semiconductor spintronics

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390052
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Applied materials
• Research Institution: Nagaoka University of Technology
• Principal Investigator: Uchitomi Naotaka 長岡技術科学大学, 工学(系)研究科(研究院), 教授 (20313562)
• Co-Investigator(Renkei-kenkyūsha): TOYOTA HIDEYUKI 長岡技術科学大学, 工学部, 技術職員 (90467085) ; JINBO YOSHIO 長岡技術科学大学, 工学部, 教務職員 (10134975)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 磁性半導体 / 多元化合物

Outline of Final Research Achievements

Ferromagnetic semiconductors with two criteria such as room-temperature ferromagnetism and process compatibility with current semiconductor technology have been required for realizing spintronics devices. In order to realize the InP-based spin spintronic devices, we demonstrated the fabrication of the magnetic quantum nanostructures consisting of Al0.48In0.52As and ZnSnAs2:Mn, together with Al0.48In0.52As/ZnSnAs2 and Ga0.47In0.53As/ZnSnAs2 structures. These materials are lattice-matched to InP substrates. Atomic-scale Mn distributions in ferromagnetic ZnSnAs2:Mn thin films grown on InP substrates have been studied by applying three-dimensional atom probe (3DAP) microscopy. It is found that Mn atoms in cross-sectional 3DAP maps show the presence of inhomogeneities in Mn distribution. The high Mn concentration regions are expected to be coherently clustered MnAs in the zinc-blende structure, resulting in the formation of Mn-As random connecting patterns.

Free Research Field

半導体工学