New injection way of spin-polarized electrons by photon excitation

2016 Fiscal Year Final Research Report

• Project/Area Number: 25390066
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: High Energy Accelerator Research Organization (2014-2016); Nagoya University (2013)
• Principal Investigator: Jin Xiuguang 大学共同利用機関法人高エネルギー加速器研究機構, 加速器研究施設, 特別助教 (20594055)
• Co-Investigator(Renkei-kenkyūsha): Yamamoto Naoto 名古屋大学, 工学研究科, 助教 (60377918) ; Torikai Eiko 山梨大学, 医学工学総合研究部, 教授 (20188832)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: スピン電子 / 超格子

Outline of Final Research Achievements

In order to inject the spin-polarized electron into Si and Ge materials, a new GaAs/GaAsP strain-compensated superlattice was designed and fabricated. In the strain-compensated superlattice, an opposing strain is introduced in the barrier layers to offset the strain in the quantum well layers so that no critical thickness limitation exists on the overall thickness of the SL structure. As a result, compared to the conventional strained superlattice, the crystal quality was much improved using the strain-compensated SL structure. In addition, a highest spin polarization of 92% was also achieved.

Free Research Field

電子デバイス