Quantitative observation of surface recombination velocities for 4H-SiC

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390067
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Kato Masashi 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 電気・電子材料 / 電子デバイス・機器 / 材料加工・処理 / 省エネルギー / 半導体物性

Outline of Final Research Achievements

The products of this research are the follows.
1) Quantitative values of surface recombination velocities and their temperature dependence are obtained for the (0001) Si- and C-faces of n-type 4H-SiC. It was also found that surface recombination velocities for 4H-SiC depend on chemicals adsorbed on the surface. 2) Methods for accuracy improvement were established in the carrier lifetime measurements based on a microwave technique. 3) Quantitative surface recombination velocities are obtained for the (0001) Si- and C-faces of p-type 4H-SiC. 4) An analysis method was established for evaluation of surface recombination velocities from experimental results under any temperature and excess carrier concentration for various samples.

Free Research Field

半導体工学