2015 Fiscal Year Final Research Report
Quantitative photoelastic imaging of residual strain in bulk substrates of semiconductor crystals
| Project/Area Number |
25390068
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
FUKUZAWA MASAYUKI 京都工芸繊維大学, 情報工学・人間科学系, 准教授 (60293990)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | 結晶評価 / 残留歪み / 光弾性法 |
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| Outline of Final Research Achievements |
A self-calibration imaging polariscope (SCIP) and an infrared imaging polariscope with sample translation mechanism (IRIP+) have been developed to achieve quantitative photo-elastic imaging of hexagonal crystals such as GaN and SiC and large crystal of casting silicon. The SCIP enabled us to detect strain-induced birefringence in hexagonal crystal by reducing the effect of its natural birefringence, which results in residual strain imaging of SiC commercial wafers. The IRIP+ also enabled us to characterize a whole-lateral slice of large ingot of casting silicon in commercial grade by avoiding strain relaxation with ingot splitting into multiple blocks.
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| Free Research Field |
多次元信号計測・画像化
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