Fundamental studies on carrier recombination process at the surface and interface to improve nitride-based optoelectronic device performance

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390071
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Kogakuin University (2015); Tokyo National College of Technology (2013-2014)
• Principal Investigator: Onuma Takeyoshi 工学院大学, 公私立大学の部局等, 准教授 (10375420)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 窒化物半導体 / 酸化ガリウム / 酸化インジウムガリウム / ヘテロ構造 / 表面酸化膜 / 界面 / 時間分解フォトルミネセンス / 表面プラズモン

Outline of Final Research Achievements

Carrier recombination process at the surface or interface is a crucial issue when the nitride-based optoelectronic devices are put into practical use, e.g., controlling the condition of the AlGaN surface states in the AlGaN/GaN heterostructure field-effect transistors. AlOx/AlN/GaN structures were prepared by the RF-MBE. Simultaneous changes in the emission energies and lifetimes were observed for the 2DEG related emission by changing in a crystallinity of the AlOx layer. The results demonstrate a possibility to control the surface states by changing in the surface oxide structure. Fundamental optical properties of Ga2O3 substrates were investigated for further improvements in the Ga2O3-based devices. Electrical and optical properties of ZnO films dispersed with Ag nanocrystals and their application in the GaInN-based blue LEDs were studied through the observations of surface plasmon resonant emission and analytical simulations.

Free Research Field

半導体工学，半導体光物性