Basic study of microplasma treatment on crystal growth improvement

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390109
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Plasma electronics
• Research Institution: Shizuoka University
• Principal Investigator: Shimizu Kazuo 静岡大学, イノベーション社会連携推進機構, 准教授 (90282681)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: マイクロプラズマ / 表面改質 / 結晶成長 / GaN

Outline of Final Research Achievements

In this study, surface treatment of GaN substrate by atmospheric pressure microplasma was carried out, and the treated GaN surface was analyzed to check the effect of atmospheric pressure microplasma on the GaN surface. Atmospheric pressure microplasma is non-thermal plasma and a type of dielectric barrier discharge that has small discharge gap and requires relatively low discharge voltage of only about 1 kV. Due to the structure of microplasma electrodes, the generated electric field was closed between the electrodes; therefore, only various active species and ions which provided by streamers could affect a target surface. GaN surface was treated by AC and negative pulse powered microplasma using as process gases Ar and N2. GaN surface was analyzed by an X-ray Photoelectron Spectroscopy (XPS) and an Atomic Force Microscope (AFM).

Free Research Field

大気圧マイクロプラズマ応用