2015 Fiscal Year Final Research Report
Formation process of embedded luminescent Si nanocrystals with ion and laser beams
| Project/Area Number |
25390124
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Quantum beam science
|
|---|
| Research Institution | Aichi University of Education |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2013-04-01 – 2016-03-31
|
| Keywords | 量子ビーム / イオン注入 / ナノ結晶 / シリコン / 可視発光 / 急速加熱 / エキシマ光 / レーザーアブレーション |
|---|
| Outline of Final Research Achievements |
In this work, the potentialities of excimer UV-light irradiation and rapid thermal annealing to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals in silicon dioxide have been investigated. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA. We also produced luminescent Si nanocrystals by using reactive pulsed laser deposition techniques.
|
| Free Research Field |
ビーム物性
|
