Development of superconducting tunnel junction X-ray detector utilizing silicon pixel absorber

2015 Fiscal Year Final Research Report

• Project/Area Number: 25390142
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Quantum beam science
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Shiki Shigetomo 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員 (50342796)
• Co-Investigator(Renkei-kenkyūsha): OHKUBO Masataka 産業技術総合研究所, ナノエレクトロニクス研究部門, 上席イノベーションコーディネーター (60356623) ; UKIBE Masahiro 産業技術総合研究所, ナノエレクトロニクス研究部門, グループ長 (00344226)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 超伝導トンネル接合 / Ｘ線検出器 / エネルギー分解能 / 微細加工 / MEMS / Ｘ線吸収分光 / 微量軽元素

Outline of Final Research Achievements

We investigated fabrication and performance of superconducting tunnel junction (STJ) X-ray detector having silicon pixel absorber (SPA) to realize high sensitivity and high energy resolution in 2-4 keV soft X-ray region. One hundred STJ pixels are fabricated on the front side of a 400 micrometer thick Si substrate. SPAs are formed etching silicon substrate from the backside of STJ pixels. The depth of the silicon trench is 350 micrometer. Energy resolution of an STJ-SPA is 135 eV FWHM for 5.9 keV X-ray. The readout noise is 18 eV FWHM. By utilizing the SPA-STJ X-ray detector, it was succeeded to acquire X-ray absorption fine structure spectra of light element of Sulfur with a concentration of less than 0.1 atomic % in a soda lime glass.

Free Research Field

極低温検出器