2015 Fiscal Year Final Research Report
Development of VUV sensor based on nitride semiconductor photodiodes
| Project/Area Number |
25400290
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
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| Research Institution | Iwate University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI EIICHI 同志社大学, 大学院総合政策科学研究科, 教授 (30367974)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | フォトダイオード / 真空紫外光 / 窒化物半導体 / 液体アルゴン測定器 / シンチレーション光 |
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| Outline of Final Research Achievements |
We developed a highly sensitive UV photo sensor with AlGaN semiconductor which has been widely used for various types of electronic devices. We fabricated the Schottky diodes with the material and investigated the electrical properties and the photo responsitivity. As the result, we succeeded in developing sensors which shows good performance in UV sensing, and clarified the issues for further improvement in sensitivity. In this study, we have shown that this type of sensor can be applied to a practical detector for high energy physics such as a liquid argon time projection chamber.
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| Free Research Field |
素粒子実験
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