Development of wide gap semiconductor pixel detector for light dark matter search

2015 Fiscal Year Final Research Report

• Project/Area Number: 25400308
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Particle/Nuclear/Cosmic ray/Astro physics
• Research Institution: High Energy Accelerator Research Organization
• Principal Investigator: Tanaka Manobu 大学共同利用機関法人高エネルギー加速器研究機構, 素粒子原子核研究所, 教授 (00222117)
• Co-Investigator(Renkei-kenkyūsha): KANEKO Junichi 北海道大学, 大学院工学研究院量子理工学部門, 准教授 (90333624) ; SHIMAOKA Takehiro 北海道大学, 大学院工学研究院量子理工学部門, 博士研究員 (80650241) ; OHSHIMA Takeshi 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主幹 (50354949) ; MAKINO Takakahiro 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員 (80549668) ; MIUCHI Kentaro 神戸大学, 理学研究科, 准教授 (80362440)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 暗黒物質 / 半導体検出器

Outline of Final Research Achievements

We developed pixel detectors based on wide gap semiconductor materials(i.e. diamond and silicon carbide) for light dark matter search. The wide gap semiconductor containing carbon improves the sensitivity for light dark matter search.
The electrode size of the detectors is about 100um x 100um. The detector shows two or three orders of magnitudes leakage reduction compared to a silicon pixel detector, and the detector capacitance of the diamond pixel is one half the silicon pixel detector. We confirmed developed pixel detectors have enough S/N for our purpose.
In order to evaluate the detectors low noise front-end integrated circuit is developed.The equivalent noise charge(ENC) is less than 100 electron which satisfies S/N for our evaluation of the detectors.

Free Research Field

素粒子原子核実験