2015 Fiscal Year Final Research Report
Fabrication of oxide-semiconductor pn diodes by UV oxidation of metallic thin films: Aiming for printed electronics
Project/Area Number |
25420283
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | The University of Electro-Communications |
Principal Investigator |
Nozaki Shinji 電気通信大学, 情報理工学(系)研究科, 教授 (20237837)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Keywords | 紫外光 / 光酸化 / 酸化物半導体 / ニッケル / 亜鉛 / FET / フレキシブルエレクトロニクス / プリンテッドエレクトロニクス |
Outline of Final Research Achievements |
The objective of this project is to fabricate a planer pn diode by UV oxidation of metallic thin films. Because most oxide semiconductors exhibit either n or p-type conductivity, an attempt was made to make a pn diode consisting of n-ZnO and p-NiO. The electron concentration and mobility of ZnO were obtained by the Hall measurement, 1E16 cm-3 and 2 cm2V-1s-1, respectively. In contrast to ZnO, the NiO film exhibits a high resistivity and the Hall measurement cannot determine its conductivity. Nevertheless, A diode-like I-V characteristic was obtained in the device made by UV oxidation of a thin metallic Ni/Zn double layer.
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Free Research Field |
半導体材料・デバイス
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