2016 Fiscal Year Final Research Report
Development of dopant concentration measuring technique for next generation semiconductor devices
| Project/Area Number |
25420285
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Chubu University (2015-2016)
Nagoya University (2013-2014) |
|---|
Principal Investigator |
|
|---|
| Research Collaborator |
NIWA Tatsuji
TEJIMA Motohiro
KARUMI Takahiro
NAGAO Shunsuke
|
|---|
| Project Period (FY) |
2013-04-01 – 2017-03-31
|
| Keywords | 電子線誘起電流 / EBIC / SEM / 不純物濃度 / シリコン |
|---|
| Outline of Final Research Achievements |
The function of semiconductor devices are controlled by electrostatic potential, and potential is controlled by changing the species and concentrations of the dopants. In developing new devices, it is often necessary to examine the dopant concentration. Today, the development of such technique is behind the needs, so this investigation aims at developing such technique. In this study, electron beam induced current(EBIC) was used to detect the dopant concentration. This technique is combined with an electron microscope, so high spacial resolution is expected. The results clearly showed that EBIC varied with the dopant concentration. However, there is a difficulty in this technique. That is preparation of the samples. With improved preparation technique, this method must be much reliable.
|
| Free Research Field |
電子顕微鏡学
|
