Novel p-type wide-gap semiconductor CuxZnyS

2016 Fiscal Year Final Research Report

• Project/Area Number: 25420286
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Ichimura Masaya 名古屋工業大学, 工学(系)研究科(研究院), 教授 (30203110)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: CuZnS / ワイドギャップ / p型半導体 / 電気化学堆積 / 光化学堆積

Outline of Final Research Achievements

CuxZnyS is a mixture of p-type CuxS and n-type ZnS, and therefore, it is expected to be either p-type or n-type, depending on composition. ZnS has a band gap of 3.5 eV while the band gap of CuxS is in a range of 2 - 2.5 eV. Thus Zn-rich CuxZnyS has a large band gap (>3 eV). The CuxZnyS films were deposited by two chemical techniques, i.e., electrochemical deposition (ECD) and photochemical deposition (PCD). The conduction is p-type for Cu content larger than 0.7 %. The as-deposited CuxZnyS was amorphous, and p-type conduction was retained at temperatures up to 200C in the annealing experiment. Thus p-type CuxZnyS is stable enough for device applications. Heterostructures were fabricated with ZnS and ZnO as the n-type partner. Rectification properties were observed for both the heterostructures, which demonstrates that CuxZnyS can be useful for optoelectronic devices such as transparent solar cells and UV sensors.

Free Research Field

半導体工学