Layer-number selective process for graphene using maskless ultra-violet laser irradiation

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420287
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: Wakaya Fujio 大阪大学, 基礎工学研究科, 准教授 (60240454)
• Co-Investigator(Kenkyū-buntansha): ABO Satoshi 大阪大学, 大学院基礎工学研究科, 助教 (60379310)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: グラフェン / レーザー加工 / マスクレス加工

Outline of Final Research Achievements

It is found that graphenes on SiO2/Si substrate disappear after KrF excimer laser irradiation with a wavelength of 258 nm at a certain power, which refers to the ‘threshold power’ in the following. The threshold power is found to depend on the layer number, or thickness, of graphene. This means that “layer-number-selective process” is possible. Actually, such a layer-number-selective process is demonstrated. Using SiO2/Si substrate all surface of which is covered by graphene, maskless laser patterning is successfully demonstrated.

Free Research Field

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