Formation of insulators for the power devices inserting interface control layer by high-density radical method

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420290
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu Institute of Technology
• Principal Investigator: IZUMI AKIRA 九州工業大学, 大学院工学研究院, 教授 (30223043)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 表面改質 / 表面窒化

Outline of Final Research Achievements

In this work, we carried out the basic study on the introduction of the interface control layer and post-heat treatment condition in order to realize a high-quality insulating film / SiC structure. We investigated in the Si (100) substrate without using the SiC substrate in this study. The interface control layer formation was carried out by catalytic decomposition of NH3 gas by heating the filament. The optimal condition was revealed as follows; filament temperature: 1600 ° C., the substrate temperature: 200 ° C, treatment time: 30 min. In addition, we examine the optimal conditions of the post-heat treatment in a nitrogen atmosphere. It was found that it is possible to reduce the interface state density by the treatment for 60 minutes at 400 ℃.

Free Research Field

半導体プロセス