Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420300
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Chubu University
• Principal Investigator: NAKANO Yoshitaka 中部大学, 工学部, 教授 (60394722)
• Co-Investigator(Renkei-kenkyūsha): IROKAWA Yoshihiro 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 (90394832) ; SUMIYA Masatomo 物質・材料研究機構, ワイドギャップ機能材料グループ, 研究員 (20293607)
• Research Collaborator: KAWAI Hiroji
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: AlGaN/GaNヘテロ構造 / GaNバッファ層 / 炭素 / 欠陥準位 / デバイス・スイッチング特性 / MOCVD結晶成長 / 電流コラプス

Outline of Final Research Achievements

AlGaN/GaN hetero-structures are one of promising materials for the next generation of RF high power devices.At present,however,these GaN-based devices encounter undesirable current collapse issues,where actual device performances at high frequencies can be limited by the presence of deep-level defects in the AlGaN/GaN hetero-structures.In this study,we have systematically investigated a correlation between deep-level defects and carrier-trapping phenomena in AlGaN/GaN hetero-structures from a viewpoint of Carbon incorporation for MOCVD growth.As the result,we have revealed what kinds of Carbon-related deep-level defects are strongly responsible for the swithching characteristics in the bulk region of the AlGaN/GaN hetero-structures.

Free Research Field

半導体物性工学