Formation of Non-Destructive Reversible Electric Contact to nm-Thick Films

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420306
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: Yoshitake Michiko 国立研究開発法人物質・材料研究機構, ナノエレクトロニクス材料, MANA研究者 (70343837)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 電気特性 / 超薄膜 / 計測技術 / XPS

Outline of Final Research Achievements

A simple probe that is applicable as an electric contact to nm-thick films and 2D films such as graphene and MoS2 without destroying the specimen has been developed. The concept of the development of the probe is based on the repulsive region used in atomic force microscopy technique but without any precise feedback. The robust electric contact with the probe has been demonstrated by biased XPS measurement of a MOS specimen and by resistivity measurement of a 5-layer graphene film on sapphire. It has also proved that there was no detectable damage or contaminations on the specimens after the measurements.

Free Research Field

表面・薄膜