Development of rapid growth technique of beta-Ga2O3 for power device applications by halide vapor phase epitaxy

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420307
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: Garcia Villora 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (90421411)
• Co-Investigator(Kenkyū-buntansha): OSHIMA Yuichi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, 主任研究員 (70623528) ; SHIMAMURA Kiyoshi 国立研究開発法人 物質・材料研究機構, 光・電子材料ユニット, グループリーダー (90271965)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 酸化物半導体 / ワイドギャップ半導体 / パワー半導体 / パワーデバイス

Outline of Final Research Achievements

We investigated the halide vapor phase epitaxy (HVPE) of Ga2O3, a promising wide bandgap semiconductor. It was found that the formation of in-plane rotational domains of β-Ga2O3 can be remarkably suppressed by using off-angled c-plane sapphire substrates, resulting in quasi-heteroepitaxial layers. We also clarified that the polymorph of Ga2O3 is strongly dependent on the substrate at low growth temperature around 550℃. In concrete, corundum-structured α-Ga2O3 is obtained on sapphire (0001), while hexagonal-structured ε-Ga2O3 can be grown on GaN(0001) and AlN(0001).

Free Research Field

酸化物半導体の結晶成長