Wafer level integration of nitride semiconductor device and Si CMOS integrated circuit for sensor application

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420330
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Toyohashi University of Technology
• Principal Investigator: Okada Hiroshi 豊橋技術科学大学, エレクトロニクス先端融合研究所, 准教授 (30324495)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 窒化物半導体 / シリコン集積回路 / 一体化技術 / デバイス作製技術 / 半導体欠陥評価 / LED / トランジスタ

Outline of Final Research Achievements

To realize novel integrated sensors and systems consist of nitride semiconductor-based devices and Si-based integrated circuit, device fabrication processes, such as an wafer bonding technique a low damage insulator film deposition technique, and so on were developed. Effects of process induced damages in nitride semiconductors were also investigated. As a proof of proposed device fabrication technology, a circuit having GaN-based LED driven by Si transistor on the same wafer was fabricated, and its successful operation was achieved for the first time.

Free Research Field

半導体工学