2015 Fiscal Year Final Research Report
High radiation resistant CMOS integrated circuits using Wide-Band Gap SiC Semiconductor
| Project/Area Number |
25420331
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electron device/Electronic equipment
|
|---|
| Research Institution | Hiroshima University |
|---|
Principal Investigator |
Shin-Ichiro Kuroki 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70400281)
|
|---|
| Project Period (FY) |
2013-04-01 – 2016-03-31
|
| Keywords | 極限環境エレクトロニクス / シリコンカーバイド / 集積回路 / MOSFET / 耐放射線 / 耐高温 / 原子力発電所廃炉 |
|---|
| Outline of Final Research Achievements |
Radiation-hardened electronics has been required for the decommissioning of the Fukushima-1 plant accident. . 4H-SiC with wide-bandgap energy is one of the candidate for base semiconductor for the radiation-hardened electronics. In this work, 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide contacts were demonstrated in harsh environments of high gamma-ray radiation up to over 100 Mrad and high-temperature up to 450°C. For an integrated logic circuits, pseudo-CMOS and nMOS inverters were also demonstrated.
|
| Free Research Field |
半導体デバイス・プロセス
|
