化学リフトオフ技術を用いたGaN系集積化面発光素子製作検討

2014 Fiscal Year Research-status Report

• Project/Area Number: 25420341
• Research Institution: Kogakuin University
• Principal Investigator: 本田 徹 工学院大学, 工学部, 教授 (20251671)
• Co-Investigator(Kenkyū-buntansha): 山口 智広 工学院大学, 工学部, 准教授 (50454517)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: GaN / 発光ダイオード / MBE / 結晶成長 / リフトオフ / 透明電極 / 酸化物 / x線回折

Outline of Annual Research Achievements

C面４H-SiCおよびサファイア基板を用いてAl単結晶成長を試みた。現時点では4H-SiC基板よりもコスト的に優れるサファイア基板を中心に検討を進めた。分子線エピタキシャル成長法(MBE)法を採用し、Al結晶層から一貫してGaNを成長した。また、0.2 µm程度のAl結晶上に成長したGaN薄膜は超音波を用いたリフトオフが可能である。Alの表面窒化後GaN薄膜成長を行うことがAl結晶を成長後に残す上で重要であるが、窒化のみではAlNの表面被覆が不十分ではないかと考え、窒化時間の検討およびAlNの追加堆積を検討した。Alの表面窒化に関しては、窒化によりAlNが表面上に形成され、時間とともに被覆率が増大するが、表面平坦性も失われる結果となった。最適時間が存在すると考える。この場合、表面被覆率が十分ではなかった。表面被覆率が低い場合、GaN成長時にGa金属とAl金属が反応し、Alエッチング犠牲層が破壊されることがわかった。そこで、AlNの追加堆積を採用した。この結果、GaN成長後にAl結晶が残ることがわかった。
また、透明電極については、Ga2O3およびGa-In-O薄膜の使用を検討した。溶液法の一種である分子プレカーサ-法による酸化物薄膜の形成を行った。薄膜成長に製作した。GaN発光層の発光波長370nmに対して80％以上の透過率が確認され、抵抗率も10-2 Ω•cm程度を実現している。課題も山積するが、透明電極として使用する場合にはGa-In-O薄膜が有効ではないかとの結論を得ている。また、ショットキー型GaN素子の試作も行った。Ga-In-O薄膜を電極として用いた場合についての実験を行った結果、オン抵抗の若干の上昇が観測されたが、370 nm帯のGaNバント間遷移関連発光が50%以上多く観測され、Ga-In-O薄膜が透明電極として使用できると考えている。

Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

サファイア基板上結晶Al薄膜の形成および表面窒化、その後のGaN薄膜製作を実現した。しかしながら、Al層とGa金属の反応が確認され、Al犠牲層にダメージを与えていた。そこで、AlN追加堆積層の挿入を計ったところ、Al結晶を残したまま、GaN薄膜の成長が安定的に実現できることを明らかにした。
Ga-In-O薄膜を利用した透明電極について検討を行い、光学的透明性および抵抗率について評価を行った。透明性については十分素子応用が可能である結果を得た。また、抵抗率については、低抵抗化の検討が必要であるが10E-2 Ωcm程度のものを実現した。GaN系ショットキー型発光素子に搭載した結果、GaNバンド端発光に起因するエレクトロルミネッセンス強度が50%増大する結果を得た。この結果は、Ga-In-O薄膜が近紫外透明導電膜として機能する可能性を示唆するものである。

Strategy for Future Research Activity

おおむね順調に研究が推移している。しかしながら、新たに判明したGaN結晶成長上の課題解決に注力し、その後、予定通り発光ダイオードの試作および素子構造検討を行う。
結晶Al薄膜上GaNの分子線エピタキシャル成長に関しては、立方晶GaNの混入および積層欠陥の低減を中心に研究を進める。また、化学リフトオフについては、Al薄膜の膜厚依存性および素子分離技術による均一なリフトオフの実現を検討する。また、透明電極に関しては、低抵抗化を進めるため、不純物添加の可能性を検討する。
素子の電流リークパスが再現性に影響を与える可能性があるので、逆方向電流リークパスをふさぐ手法についても検討を進める。手法としては、これまでに行ってきたAlフェースパック法を基に考える。

Research Products

• [Journal Article] Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions (2015)
  • Author(s): H. Nagai, S. Mita, I. Takano, T. Honda and M. Sato
  • Journal Title: Materials Letters Volume: 141 Pages: 235-237
  • DOI: 10.1016/j.matlet.2014.11.056
  • Peer Reviewed
• [Journal Article] Impacts of AlOx formation on emission properties of AlN/GaN heterostructures (2015)
  • Author(s): T. Onuma, Y. Sugiura, T. Yamaguchi, T. Honda and M. Higashiwaki
  • Journal Title: Applied Physics Express Volume: 8 Pages: 052401 1-3
  • DOI: 10.7567/APEX.8.052401
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Cathodoluminescence spectra of Ga–In–O polycrystalline films fabricated by molecular precursor method (2014)
  • Author(s): T. Onuma, T. Yasuno, S. Takano, R. Goto, S. Fujioka, T. Hatakeyama, T. Oda, H. Hara, C. Mochizuki, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Pages: 05FF02
  • DOI: 10.7567/JJAP.53.05FF02
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Growth of crystallized AlOx on AlN/GaN heterostructures by in-situ RF-MBE (2014)
  • Author(s): Y. Sugiura, T. Honda and M. Higashiwaki
  • Journal Title: Journal of Crystal Growth Volume: 405 Pages: 64-67
  • DOI: 10.1016/j.jcrysgro.2014.07.055
  • Peer Reviewed
• [Journal Article] Formation Mechanism of p-Type Cu2O Thin Films via Intermediate Cu0 Species Derived from Cu(II) Complex of Ethylenediamine-N,N,N′,N′-Tetraacetic Acid (2014)
  • Author(s): H. Nagai, T.Suzuki, C. Mochizuki, I. Takano, T. Honda and M. Sato
  • Journal Title: Science of Advanced Materials Volume: 6 Pages: 603-611
  • DOI: 10.1166/sam.2014.1788
  • Peer Reviewed
• [Presentation] 窒化ガリウム系発光ダイオードにおける「グリーンギャップ」問題 (2015)
  • Author(s): 本田 徹, 山口 智広
  • Organizer: JAEA放射光科学シンポジウム 2015 「環境・エネルギー研究開発における放射光科学」
  • Place of Presentation: 型放射光施設 SPring-8 放射光普及棟, 佐用町, 兵庫県
  • Year and Date: 2015-03-16 – 2015-03-17
  • Invited
• [Presentation] β-Ga2O3結晶の透過と反射スペクトルの偏光依存性 (2015)
  • Author(s): 尾沼 猛儀, 齋藤 伸吾, 佐々木 公平, 増井 建和, 山口 智広, 本田 徹, 東脇 正高
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-15
• [Presentation] 分子プレカーサー水溶液を用いたミストCVD法によるZnO薄膜製作 (2015)
  • Author(s): 後藤 良介, 澁木 勇人, 田沼 圭亮, 畠山 匠, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] RF-MBEによる窒化サファイア基板上アルミニウム薄膜成長 (2015)
  • Author(s): 星川 侑也, 大澤 真弥, 松本 雄大, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] ミストCVDによるα-(AlGa)2O3混晶成長の基礎検討- α-Ga2O3と比較したα-Al2O3の成長速度の検討 (2015)
  • Author(s): 高橋 幹夫, 畠山 匠, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Ga-In-O薄膜のウェットエッチングプロセス検討 (2015)
  • Author(s): 吉田 邦晃, 藤岡 秀平, 後藤 良介, 永井 裕己, 山口 智広, 佐藤 光史, 本田 徹
  • Organizer: 第62回応用物理学会春季講演会
  • Place of Presentation: 東海大学湘南キャンパス, 秦野, 神奈川
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Growth and doping of In-based nitride semiconductors using DERI method (2015)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: The 2015 Materials Challenges in Alternative and Renewable Energy Conference (MCARE 2015)
  • Place of Presentation: LOTTE Hotel, Jeju, Korea
  • Year and Date: 2015-02-24 – 2015-02-27
  • Invited
• [Presentation] Progress in InGaN growth by RF-MBE and development to optical device fabrication (2015)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: SPIE Photonic West 2015
  • Place of Presentation: The Moscone Center, San Francisco, CA, USA
  • Year and Date: 2015-02-13 – 2015-02-18
  • Invited
• [Presentation] Cathode luminescence at 520 nm related on fluorescence green emission from pits formed on surface of GaInN films (2014)
  • Author(s): N. Toyomitsu, L. Sang, J. Wang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] Properties of near-UV transparent Ga-In-O electrode in GaN-ased MOS-LED (2014)
  • Author(s): S. Fujioka, T. Yasuno, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] Fabrication of -(AlGa)2O3 on sapphire substrate by mist CVD (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
  • Organizer: 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
  • Place of Presentation: Kaohsiung, Taiwan
  • Year and Date: 2014-12-14 – 2014-12-19
• [Presentation] AR-XPS spectra and band-bending properties of +c, -c and m-GaN surfaces (2014)
  • Author(s): D. Isono, S. Fujioka, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: Materials Research Society 2014 Fall Meeting
  • Place of Presentation: Hynes Convention Center, Boston, MA, USA
  • Year and Date: 2014-12-01 – 2014-12-05
• [Presentation] Raman scattering study of α-Ga2O3 single-crystal films grown by mist CVD (2014)
  • Author(s): L. Artus, N. Domenech-Amador, R. Cusco, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: Materials Research Society 2014 Fall Meeting
  • Place of Presentation: Hynes Convention Center, Boston, MA, USA
  • Year and Date: 2014-12-01 – 2014-12-05
• [Presentation] Growth and characterization of Ga-In-O by mist CVD (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 13th International Symposium on Advanced Technology (ISAT-13)
  • Place of Presentation: Danang, Vietnam
  • Year and Date: 2014-11-13 – 2014-11-16
• [Presentation] Growth of oxide thin films by mist chemical vapor deposition – Application of corundum-structured oxides for growth of GaN - (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 13th International Symposium on Advanced Technology (ISAT-13)
  • Place of Presentation: Danang, Vietnam
  • Year and Date: 2014-11-13 – 2014-11-16
• [Presentation] Mist chemical vapor deposition growth of group-III oxides and its growth mechanism (2014)
  • Author(s): T. Yamaguchi, T. Hatakeyama, K. Tanuma, M. Sugimoto, H. Nagai, T. Onuma, M. Sato and T. Honda
  • Organizer: The Corroborative Conference on Crystal Growth (3CG)
  • Place of Presentation: Phuket, Tailand
  • Year and Date: 2014-11-05 – 2014-11-05
  • Invited
• [Presentation] 下地GaN層の歪みの異なるGaInN薄膜表面ピット形成と蛍光特性 (2014)
  • Author(s): 豊満 直樹, Liwen Sang, Wang Jianyu, 山口 智広, 本田 徹, 角谷 正友
  • Organizer: 第3回応用物理学会結晶工学分科会結晶工学未来塾
  • Place of Presentation: 学習院大学, 豊島区, 東京
  • Year and Date: 2014-11-03 – 2014-11-03
• [Presentation] 六方晶GaN中に挿入した一分子層InNの構造完全性による影響 (2014)
  • Author(s): 渡邊 菜月, 多次見 大樹, 尾沼 猛儀, 山口 智広, 本田 徹, 橋本 直樹, 草部 一秀, 王 科, 吉川 明彦
  • Organizer: 第3回応用物理学会結晶工学分科会結晶工学未来塾
  • Place of Presentation: 学習院大学, 豊島区, 東京
  • Year and Date: 2014-11-03 – 2014-11-03
• [Presentation] Influence of surface oxides for band bending of n-type GaN (2014)
  • Author(s): Y. Sugiura, D. Isono, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Mist chemical vapor deposition growth of α-(AlGa)2O3 (2014)
  • Author(s): T. Hatakeyama, K. Tanuma, S. Osawa, Y. Sugiura, T. Onuma, T. Hirasaki, H. Murakami, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Characterization of fluorescence emission of GaInN films (2014)
  • Author(s): N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Characterization of GaN thin film grown on pseudo Al templates by radio-frequency plasma-assisted molecular beam epitaxy (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Interface reaction between Al and N atoms in GaN growth on Al by RF-MBE (2014)
  • Author(s): S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication of ZnO thin film by molecular precursor method (2014)
  • Author(s): R. Goto, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Mist chemical vapor deposition of Ga-In-O films (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, R. Goto, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] X-ray photoelectron spectroscopy of C+, C- and M-GaN surfaces (2014)
  • Author(s): D. Isono, Y. Sugiura, T. Yamaguchi and T. Honda
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication and characterization of photovoltaic devices consisted of metal-oxide thin films fabricated by molecular precursor method (2014)
  • Author(s): Y. Inaoka, H. Nagai, T. Honda and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Template layer for c-axis oriented ZnO thin films by using a molecular precursor solution (2014)
  • Author(s): T. Shibukawa, H. Nagai, I. Takano, T. Honda, and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Fabrication and electrochemical properties of LiNi0.5Mn0.5O2 thin-film cathode for lithium ion batteries (2014)
  • Author(s): K. Honma, H. Nagai, L. Lu, I. Takano, T. Honda, and M. Sato
  • Organizer: The joint symposiums of the 1st Innovation Forum of Advanced Engineering and Education (IFAEE)
  • Place of Presentation: Kogakuin University, Tokyo, Japan
  • Year and Date: 2014-11-01 – 2014-11-02
• [Presentation] Ga2O3基板の光学特性評価 (2014)
  • Author(s): 尾沼 猛儀, 山口 智広, 伊藤 雄三, 本田 徹, 佐々木 公平, 増井 建和, 東脇 正高
  • Organizer: ワイドギャップ半導体光・電子デバイス第162委員会第91回研究会「酸化物材料の最近の進展」
  • Place of Presentation: 京都大学東京オフィス, 品川, 東京
  • Year and Date: 2014-09-26 – 2014-09-26
  • Invited
• [Presentation] Growth of InGaN alloys using DERI method and fabrication of LED structures (2014)
  • Author(s): T. Yamaguchi, T. Araki, T. Onuma, T. Honda and Y. Nanishi
  • Organizer: Energy Materials Nanotechnology open access week (EMN open access week)
  • Place of Presentation: Chengdu, China
  • Year and Date: 2014-09-24 – 2014-09-24
  • Invited
• [Presentation] AlOx/AlNヘテロ構造の発光特性 (2014)
  • Author(s): 尾沼 猛儀, 杉浦 洋平, 山口 智広, 本田 徹, 東脇 正高
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Mist CVD法を用いて製作したα-Al2O3基板上Ga-In-O薄膜の評価 (2014)
  • Author(s): 田沼 圭亮, 畠山 匠, 尾沼 猛儀, 山口 智広, 窪谷 茂幸, 片山 竜二, 松岡 隆志, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] RF-MBE法を用いたGaN成長が疑似Al基板に与える影響 (2014)
  • Author(s): 大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 疑似Al基板上GaN薄膜のフォトルミネッセンス評価 (2014)
  • Author(s): 渡邉 悠斗, 大澤 真弥, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] n-GaN結晶のXPSスペクトルにおける内殻準位ピーク非対称性の検討 (2014)
  • Author(s): 磯野 大樹, 網谷 良介, 杉浦 洋平, 山口 智広, 本田 徹
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学, 札幌, 北海道
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Kelvin force microscopic study on GaN layers grown on (111)Al templates by RF-MBE (2014)
  • Author(s): T. Honda, T. Yamaguchi, Y. Sugiura, D. Isono, Y. Watanabe, S. Osawa, D. Tajimi, T. Iwabuchi, S. Kuboya, T. Tanikawa, R. Katayama and T. Matsuoka
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Growth of pn-GaInN structures by RF-MBE and fabrication of homojunction-type light emitting diodes (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Growth of α-Ga2O3 on α-Al2O3 substrate by mist CVD and growth of GaN on α -Ga2O3 buffer layer by RF-MBE (2014)
  • Author(s): T. Yamaguchi, T. Hatakeyama, Y. Sugiura, T. Onuma and T. Honda
  • Organizer: 18th International Conference on Molecular Beam Epitaxy (ICMBE 2014)
  • Place of Presentation: High Country conference center Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
• [Presentation] Optical properties of GaInN p-n homojunction blue-green light-emitting-diodes (2014)
  • Author(s): T. Onuma, K. Narutani, S. Fujioka, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, T. Honda
  • Organizer: International Union of Materials Research Societies, International Conference in Asia 2014 (IUMRS-ICA 2014)
  • Place of Presentation: Fukuoka, Japan
  • Year and Date: 2014-08-25 – 2014-08-25
  • Invited
• [Presentation] Thickness dependence of pseudo aluminum templates in growth of GaN by RF-MBE (2014)
  • Author(s): S. Osawa, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The International Workshop on Nitride Semiconductors (IWN 2014)
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] Study on structure perfection of one-monolayer thick InN in hexagonal GaN using XRD techniques (2014)
  • Author(s): N. Watanabe, D. Tajimi, N. Hashimoto, K. Kusakabe, K.Wang, T. Yamaguchi, A. Yoshikawa and T. Honda
  • Organizer: The International Workshop on Nitride Semiconductors (IWN 2014)
  • Place of Presentation: Wroclaw, Poland
  • Year and Date: 2014-08-24 – 2014-08-29
• [Presentation] In-situ MBE法を用いたAlOx/AlN/GaNヘテロ構造の製作 (2014)
  • Author(s): 杉浦 洋平, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] Mist CVDを用いた酸化物薄膜成長 (2014)
  • Author(s): 畠山 匠, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaN系MOS-LEDを用いたGa-In-O近紫外透明電極の評価 (2014)
  • Author(s): 藤岡 秀平, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 疑似Al基板上に成長したGaN薄膜の特性評価 (2014)
  • Author(s): 渡邉 悠斗, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaN層のケミカルリフトオフに向けたAlの膜厚検討 (2014)
  • Author(s): 大澤 真弥, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] GaInNからの蛍光発光と結晶性の相関 (2014)
  • Author(s): 豊満 直樹, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 厚膜GaInN成長とホモ接合型青緑LEDsの製作 (2014)
  • Author(s): 鳴谷 健人, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] Mist CVD法を用いて成長したα-Al2O3基板上Ga-In-O薄膜の製作 (2014)
  • Author(s): 田沼 圭亮, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] n-GaN結晶のXPSにおける内部電界強度とピーク非対称性の検討 (2014)
  • Author(s): 磯野 大樹, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] 分子プレカーサー法によるZnO薄膜製作のための熱処理温度の検討 (2014)
  • Author(s): 後藤 良介, 山口 智広, 本田 徹
  • Organizer: 37th International Symposium on Optical communications
  • Place of Presentation: Fuji Calm, Fuji-Yoshida, Yamanashi, Japan
  • Year and Date: 2014-08-09 – 2014-08-11
• [Presentation] RF-MBE growth of GaInN films using DERI method and fabrication of p-n homojunction blue-green light-emitting diodes (2014)
  • Author(s): T. Yamaguchi, K. Narutani, T. Onuma, T. Araki, T. Honda and Y. Nanishi
  • Organizer: The 6th International Symposium on Functional Materials (ISFM 2014)
  • Place of Presentation: Singapore
  • Year and Date: 2014-08-07 – 2014-08-07
  • Invited
• [Presentation] RF-MBE growth of GaInN ternary alloys using DERI method and fabrication of pn-GaInN LEDs (2014)
  • Author(s): T. Yamaguchi, K. Narutani, T. Onuma, T. Honda, T. Araki and Y. Nanishi
  • Organizer: 2014 International Workshop on Future Energy Materials and Devices (IWFEMD 2014)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2014-08-04 – 2014-08-06
  • Invited
• [Presentation] RF-MBE法によるGaInN厚膜成長とpnホモ接合型LEDの製作 (2014)
  • Author(s): 鳴谷 建人, 山口 智広, Ke Wang, 荒木 努, 名西 憓之, Liwen Sang, 角谷 正友, 藤岡 秀平, 尾沼 猛儀, 本田 徹
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 名古屋市, 愛知
  • Year and Date: 2014-07-26 – 2014-07-26
• [Presentation] RF-MBE法を用いた膜厚の異なるAlテンプレート上GaN成長 (2014)
  • Author(s): 大澤 真弥, 渡邉 悠斗, 尾沼 猛儀, 山口 智広, 本田 徹
  • Organizer: 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学, 名古屋市, 愛知
  • Year and Date: 2014-07-26 – 2014-07-26
• [Presentation] Impact of perfection on one-monolayer thick InN in hexagonal GaN (2014)
  • Author(s): N. Watanabe, D. Tajimi, T. Onuma, N. Hashimoto, K. Kusakabe, K. Wang, A. Yoshikawa, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] AR-XPS spectra of c-, c+ and m-plane n-GaN crystals (2014)
  • Author(s): D. Isono, R. Amiya, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Investigation of Ga-In-O films grown on α-Al2O3 substrates by mist CVD (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Blue-green light emitting diodes using pn-GaInN homojunction type-structure (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] “Impact of UV transparent Ga-In-O electrode in vertical-type GaN-based metal oxide semiconductor light-emitting diodes (2014)
  • Author(s): S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato and T. Honda
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] Fabrication of the transparent and c-axis oriented ZnO thin film by molecular precursor method (2014)
  • Author(s): T. Shibukawa, H. Nagai, I. Takano, T. Honda and M. Sato
  • Organizer: The 33rd Electronic Materials Symposium
  • Place of Presentation: Laforet Shuzenji, Shizuoka, Japan
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] RF-MBE growth of group-III nitrides and mist CVD growth of group-III oxides (2014)
  • Author(s): T. Yamaguchi, T. Onuma, H. Nagai, C. Mochizuki, M. Sato, T. Honda, T. Araki and Y. Nanishi
  • Organizer: Third International Conference on Materials Energy and Environments (ICMEE 2014)
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2014-07-02 – 2014-07-05
  • Invited
• [Presentation] Fabrication of copper thin films using the solution based method (2014)
  • Author(s): H. Nagai, T. Nakano, S. Mita, T. Yamaguchi, I. Takano, T. Honda and M. Sato
  • Organizer: Third International Conference on Materials Energy and Environments (ICMEE 2014)
  • Place of Presentation: Honolulu, Hawaii, USA
  • Year and Date: 2014-07-02 – 2014-07-05
  • Invited
• [Presentation] Mist CVD growth of Ga-In-O films grown on α-Al2O3 substrates (2014)
  • Author(s): K. Tanuma, T. Hatakeyama, T. Onuma, T. Yamaguchi, T. Honda
  • Organizer: International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Spin-coating fabrication of In-doped ZnO films by molecular precursor method (2014)
  • Author(s): R. Goto, T. Yasuno, T. Hatakeyama, H. Hara, H. Nagai, T. Yamaguchi, M. Sato, T. Honda
  • Organizer: International Union of materials Research Societies-International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014)
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2014-06-10 – 2014-06-14
• [Presentation] Fabrication of Pseudo Aluminum Templates on 4H-SiC and Growth of GaN on Pseudo Aluminum Templates by RF-MBE (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Hatakeyama, T. Yamaguchi and T. Honda
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: The Westin, Peachtree Plaza, Atlanta, Georgia, USA
  • Year and Date: 2014-05-18 – 2014-05-22
• [Presentation] Influence of Surface Oxides for Band Bending of N-Type GaN (2014)
  • Author(s): Y. Sugiura, R. Amiya, D. Isono, T. Yamaguchi and T. Honda
  • Organizer: 5th International Symposium on Growth of III-Nitrides (ISGN-5)
  • Place of Presentation: The Westin, Peachtree Plaza, Atlanta, Georgia, USA
  • Year and Date: 2014-05-18 – 2014-05-22
• [Presentation] Mist Chemical Vapor Deposition Growth of Ga2O3, In2O3 and Their Alloys (2014)
  • Author(s): T. Yamaguchi, K. Tanuma, T. Hatakeyama, T. Onuma and T. Honda
  • Organizer: he 41st International Symposium on Compound Semiconductor (ISCS 2014)
  • Place of Presentation: Le Column, Montpellier, France
  • Year and Date: 2014-05-11 – 2014-05-14
• [Presentation] Light emission properties of ultra thin InN in the GaN matrix (2014)
  • Author(s): T. Honda, T. Yamaguchi, T. Onuma, D. Tajimi, N. Watanabe, N. Hashimoto, K. Kusakabe and A. Yoshikawa
  • Organizer: International Conference on Metamaterials and Nanophysics (Metanano2014)
  • Place of Presentation: Hotel Melia Varadero, Varadero, Cuba
  • Year and Date: 2014-04-22 – 2014-05-01
  • Invited
• [Presentation] Optical Properties of Ga-In-O Polycrystalline Films Fabricated by Molecular Precursor Method (2014)
  • Author(s): T. Onuma, T. Yasuno, S. Takano, R. Goto, S. Fujioka, T. Hatakeyama, H. Hara, C. Mochizuki, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-25
• [Presentation] Characterization of Dark Spots on GaInN Films by Using Fluorescence Microscope and Secondary Ion Mass Spectroscopy (2014)
  • Author(s): N. Toyomitsu, L. Sang, T. Yamaguchi, T. Honda and M. Sumiya
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] RF-MBE Growth of pn-GaInN Structure and Fabrication of Blue-Green Homojunction-Type Light Emitting Diode (2014)
  • Author(s): K. Narutani, T. Yamaguchi, K. Wang, T. Araki, Y. Nanishi, L. Sang, M. Sumiya, S. Fujioka, T. Onuma, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Fabrication of Vertical-Type GaN-Based Metal Oxide Semiconductor Light-Emitting Diodes (2014)
  • Author(s): S. Fujioka, T. Yasuno, A. Sato, T. Onuma, H. Nagai, T. Yamaguchi, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Effect of Pseudo Aluminum Templates in RF-MBE Growth of GaN on 4H-SiC (2014)
  • Author(s): Y. Watanabe, S. Osawa, D. Tajimi, T. Yamaguchi, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24
• [Presentation] Fabrication of In-Doped ZnO Thin Film by Molecular Precursor Method (2014)
  • Author(s): R. Goto, T. Yasuno, H. Nagai, H. Hara, M. Sato, and T. Honda
  • Organizer: Conference on LED and Its Industrial Application ’14 (LEDIA’14)
  • Place of Presentation: Pacifico Yokohama, Kanagawa, Japan
  • Year and Date: 2014-04-22 – 2014-04-24