Fabrication processes of GaN-based integrated surface-emitting devices using a chemical liftoff techniques

2015 Fiscal Year Final Research Report

• Project/Area Number: 25420341
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Kogakuin University
• Principal Investigator: Honda Tohru 工学院大学, 公私立大学の部局等, 教授 (20251671)
• Co-Investigator(Kenkyū-buntansha): YAMAGUCHI Tomohiro 工学院大学, 先進工学部, 准教授 (50454517)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 窒化ガリウム / 発光ダイオード / 分子線エピタキシャル成長法 / 結晶成長 / リフトオフ / 透明電極 / 酸化物 / X線回折

Outline of Final Research Achievements

The target of this project is for fabricating GaN growth on Al templates, which can be separated from the sapphire substrate using chemical liftoff techniques, and near UV transparent conductive films for GaN-based integrated surface emitting devices. The detailed research topics are the followings; (1) the fabrication of GaN layers grown on Al templates, and (2) the realization of GaN-based integrated surface emitting devices with transparent conductive films fabricated by molecular precursor method. In the topic 1, we grew GaN films on pseudo Al substrates by molecular beam epitaxy (MBE) and investigated the growth mechanisms on the pseudo substrates. The surface cracks can be reduced using a low-temperature buffer deposition. In the topic 2, we fabricated GaInOx thin films by molecular precursor method, which is one of the solution techniques using spin coating. These films were also fabricated on a blue LED structure.

Free Research Field

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