Control of single charge/spin states by terahertz radiation

2014 Fiscal Year Final Research Report

• Project/Area Number: 25600013
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Tohoku Institute of Technology (2014); The University of Tokyo (2013)
• Principal Investigator: SHIBATA Kenji 東北工業大学, 工学部, 講師 (00436578)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 量子ドット / テラヘルツ / トランジスタ

Outline of Final Research Achievements

Electrical manipulation and read-out of quantum mechanical states of electrons in zero-dimensional (0D) nanostructures is a key to great innovation in quantum information processing. In self-assembled InAs quantum dots (QDs), charging/orbital quantization energies are typically 10-40 meV, which corresponds to the THz range. Moreover, electrons in InAs QDs have very large g-factors and also experience strong spin-orbit interaction. InAs QDs are therefore a good candidate for their applications to spintronic and quantum information devices which work in THz range. In this work, we have investigated the electron transport through a single self-assembled InAs QD under THz wave irradiation in order to open new possibilities of controlling carrier dynamics in quantum nanostructures by THz radiation.

Free Research Field

ナノエレクトロニクス