Study on low-power-consumption magnetic memory devices created by bottom-up formation of ferromagnetic nanowires

2015 Fiscal Year Final Research Report

• Project/Area Number: 25600034
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Nanomaterials engineering
• Research Institution: Hokkaido University
• Principal Investigator: HARA Shinjiro 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (50374616)
• Research Collaborator: KLAR Peter Jens ユストゥス・リービッヒ大学ギーセン, 第1実験物理研究所, 教授 ; ELM Matthias Thomas ユストゥス・リービッヒ大学ギーセン, 物理化学研究所, 博士研究員
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 強磁性体ナノワイヤ / 選択成長 / 3次元磁気メモリ / 強磁性体／半導体複合ナノ構造 / ボトムアップ形成 / ナノテクノロジ / 有機金属気相成長 / スピントロニクス

Outline of Final Research Achievements

We have proposed our novel bottom-up formation method to create lateral and vertical nanowires (NW), which are promising for the application to low-power-consumption three-dimensional magnetic racetrack memory devices in next generation. Magnetic properties of various types of the NWs were investigated, and nanodevice fabrication processes were developed. It was still difficult to create vertical ferromagnetic MnAs NWs. However, we successfully fabricated various types of NW structures, e.g., lateral ferromagnetic NWs, vertical MnAs/InAs heterojunction NWs, and lateral NW spin-valve devices. Under the international cooperative research with our German colleague, we succeeded in controlling magnetic domain structures in the NWs by the applied external magnetic fields and magnetic shape anisotropy and understanding the contribution of thermally activated switching in the magnetic domain structures to the observed magnetic random telegraph noise.

Free Research Field

電子材料工学