2015 Fiscal Year Final Research Report
Quantum Dot Single Hole Device based on Strained Germanium Two Dimensional Hole Gas
| Project/Area Number |
25600079
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials
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| Research Institution | Tokyo City University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | ゲルマニウム / 量子ドット |
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| Outline of Final Research Achievements |
Since semiconductor integrated circuit technology has been approaching the scaling limit of devices, novel device structures with ultralow power consumption are required. In this research, we focus on Germanium (Ge) as a novel material, and with the aim of opening possibilities of Ge we developed technologies toward strained Ge single hole devices enabling spin control with very low power consumptions. Particularly, with utilizing technologies of high quality crystal growth and formation of gate insulators, a Ge channel two-dimensional-hole-gases were created on Si substrates, and we found that the top-gating was able to control the transport and spin properties, allowing in-plane local depletion of holes, which are highly important for realization of Ge dot devices.
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| Free Research Field |
半導体工学
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