非発光再結合準位のエネルギー分布測定が可能な革新的蛍光顕微鏡の開発

2015 Fiscal Year Annual Research Report

• Project/Area Number: 25600087
• Research Institution: Saitama University
• Principal Investigator: 鎌田 憲彦 埼玉大学, 理工学研究科, 教授 (50211173)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 結晶工学 / 非発光再結合準位 / 光学評価 / フォトルミネッセンス

Outline of Annual Research Achievements

結晶欠陥により禁制帯内に生じる非発光再結合（NRR)準位は発光素子の効率低下、寿命短縮の元凶であり、その要因を調べて結晶成長条件を最適化し、可能な限り混入を抑止する必要がある。本研究では禁制帯内励起（BGE)光の照射によるPL強度変化からNRR準位を電極を用いずに検出し、BGEエネルギー依存性から準位のエネルギー分布を調べる蛍光顕微技術の開発を目指した。
本年度はBSON蛍光体、GaPN、GaN基板、およびサファイア基板上に成長したAlGaN多重量子井戸層を用いて、NRR準位の検出とそのBGEエネルギー依存性測定を実施し、各々の成果について論文投稿、国際会議講演を進めた。2波長励起によるPL強度変化の度合いは試料依存性が強く、BGE光源の波長-出力特性の制御を残したため、エネルギー分布のその場観測には至らなかったが、BSON蛍光体、GaPN、GaNについては準位分布の手がかりを得た。特にGaPNでは、窒素濃度0.56%の試料について中間バンドを介した2種類のNRR準位を分離評価した。またGaN基板では各発光成分毎のBGE効果の観測から、議論の絶えなかったYellow Luminescence Bandの遷移過程と関与する準位の位置を初めて明示した。これまでの測定を基に、次段階の装置系改良指針を得た。

Research Products

• [Journal Article] Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence (2015)
  • Author(s): N. Kamata, A. Z. M. Touhidul Islam, M. Julkarnain, N. Murakoshi, T. Fukuda, and H. Hirayama
  • Journal Title: Phys. Status Solidi B Volume: 252 Pages: 936-939
  • DOI: 10.1002/pssb.201451582
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Dominant nonradiative centers in InGaN single quantum well by time-resolved and two-wavelength excited photoluminescence (2015)
  • Author(s): M. Julkarnain, N. Murakoshi, A. Z. M. Touhidul Islam, T. Fukuda, N. Kamata, and Y. Arakawa
  • Journal Title: Phys. Status Solidi B Volume: 252 Pages: 952-955
  • DOI: 10.1002/pssb.201451499
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation, A Mini Review of Two-Wavelength Excited Photoluminescence (2015)
  • Author(s): N. Kamata, Abu Zafor Md. Touhidul Islam
  • Journal Title: Rajshahi University Journal of Science and Engineering Volume: 43 Pages: 1-9
  • DOI: ISSN: 2309-0952
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate (2015)
  • Author(s): ・B. T. Tran, H. Hirayama, N. Maeda, M. Jo, S. Toyoda and N. Kamata
  • Journal Title: Scientific Report, Nature Volume: 5 Pages: 14734 (1-6)
  • DOI: 10.1038/srep14734
  • Peer Reviewed
• [Journal Article] A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence (2015)
  • Author(s): M.Julkarnain, T.Fukuda, N. Kamata and Y. Arakawa
  • Journal Title: Appl. Phys. Lett. Volume: 107 Pages: 212102 (1-4)
  • DOI: 10.1063/1.4936243
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Trap and nonradiative centers in Ba3Si6O12N2:Eu2+phosphors observed by thermoluminescence and two-wavelength excited photoluminescence methods (2015)
  • Author(s): T. Li, N. Kamata, Y. Kotsuka, T. Fukuda, Z. Honda and T. Kurushima
  • Journal Title: Opt. Express Volume: 23 Pages: 16511 (1-6)
  • DOI: 10.136410E.23.016511
  • Peer Reviewed
• [Journal Article] Below-gap emission bands in undoped GaN and its excitation density dependence (2015)
  • Author(s): M. Julkarnain, T. Fukuda, N. Kamata. and Y. Arakawa
  • Journal Title: Phys. Status Solidi C Volume: 1-3 Pages: 10190
  • DOI: 10.1002/pssc.201510190
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] 深紫外LEDの光取出し効率の向上に向けて (2015)
  • Author(s): 平山秀樹、定昌史、前田哲利、鹿嶋行雄、鎌田憲彦
  • Journal Title: 月刊OPTRONICS 11月号特集「深紫外LEDの効率向上と市場展開への期待」 Volume: 34 Pages: 101-105
  • DOI: ISSN 0286-9659
• [Presentation] Non-radiative Recombination Centers in AlGaN Quantum Well Characterized by Two-Wavelength Excited Photoluminescence (2016)
  • Author(s): M. Julkarnain, T. Fukuda, N. Kamata and H. Hirayama
  • Organizer: Int. Symp. on Compound Semiconductors 2016
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26 – 2016-06-30
  • Int'l Joint Research
• [Presentation] Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence (2016)
  • Author(s): M. Suetsugu, *N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson and Per-Olof Holtz
  • Organizer: Int. Symp. on Compound Semiconductors 2016
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26 – 2016-06-30
  • Int'l Joint Research
• [Presentation] Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density- (2016)
  • Author(s): K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda and Z. Honda
  • Organizer: Int. Symp. on Compound Semiconductors 2016
  • Place of Presentation: Toyama, Japan
  • Year and Date: 2016-06-26 – 2016-06-30
  • Int'l Joint Research
• [Presentation] Recent Progress of AlGaN Deep-UV LEDs (2016)
  • Author(s): H. Hirayama, M. Jo, N. Maeda and N. Kamata
  • Organizer: Int. Symp. on the Science and Technology of Lighting (LS-15)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2016-05-22 – 2016-05-25
  • Int'l Joint Research / Invited
• [Presentation] Below-gap radiative and nonradiative channels in undoped GaN epilayers -Growth temperature dependence of buffer layer (2016)
  • Author(s): M. Julkarnain, N. Kamata, T. Fukuda and Y. Arakawa
  • Organizer: Int. Symp. on the Science and Technology of Lighting (LS-15)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2016-05-22 – 2016-05-25
  • Int'l Joint Research
• [Presentation] Two Wavelength Excited Photoluminescence in K2SiF6:Mn4+ Phosphor (2016)
  • Author(s): Y. Kotsuka, T. Fukuda, Z. Honda, N. Kamata, M. Kaneyoshi
  • Organizer: Int. Symp. on the Science and Technology of Lighting (LS-15)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2016-05-22 – 2016-05-25
  • Int'l Joint Research
• [Presentation] Recent Progress of AlGaN Deep-UV LEDs (2016)
  • Author(s): H. Hirayama, M. Jo, N. Maeda and N. Kamata
  • Organizer: Int. Symp. on Advanced Plasma Science and its Applications for Nitrides and Nano Materials / Int. Conf. on Plasma-Nano Technology & Science (IS-Plasma 2016 / IC-PLANTS2016)
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2016-03-06 – 2016-03-10
  • Int'l Joint Research / Invited
• [Presentation] Precise Growth Control for AlGaN/GaN Superlattices by MBE and MOCVD for Developing GaN-based THz Quantum Cascade Lasers (2015)
  • Author(s): H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
  • Organizer: Energy Materials and Nanotechnology Collaborative Conference on Crystal Growth (EMN3CG) 2015
  • Place of Presentation: Hong Kong, China
  • Year and Date: 2015-12-14 – 2015-12-17
  • Int'l Joint Research / Invited
• [Presentation] Terahertz Qunatum-Cascade Laser based on III-nitride Semiconductors (2015)
  • Author(s): H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
  • Organizer: Int. Symp. on Growth of III-Nitrides (ISGN-6)
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 2015-11-08 – 2015-11-12
  • Int'l Joint Research / Invited
• [Presentation] THz Quantum Cascade Lasers using Nitirde Semiconductors (2015)
  • Author(s): H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
  • Organizer: Workshop on Physics and Technologies of Semiconductor Lasers
  • Place of Presentation: Krakow, Poland
  • Year and Date: 2015-10-11 – 2015-10-15
  • Int'l Joint Research
• [Presentation] Progress of THz Quantum Cascade Laser Using Nitride Semiconductor (2015)
  • Author(s): H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
  • Organizer: Int. Conf. on Nitride Semiconductors (ICNS 2015)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-08-30 – 2015-09-04
  • Int'l Joint Research / Invited
• [Presentation] Below-Gap Emission Bands in Undoped GaN and Its Excitation Density Dependence (2015)
  • Author(s): M. Julkarnain, T. Fukuda, N. Kamata and Y. Arakawa
  • Organizer: Int. Conf. on Nitride Semiconductors (ICNS 2015)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-08-30 – 2015-09-04
  • Int'l Joint Research
• [Presentation] Nonradiative recombination pathway via the intermediate band in GaP1-xNx studied by below-gap excitation (2015)
  • Author(s): ・M. Suetsugu, M. Eriksson, K. F. Karlsson, P. O. Holtz, N. Kamata, S. Yagi and H.Yaguchi
  • Organizer: Int. Conf. on Defects in Semiconductors (ICDS-2015)
  • Place of Presentation: Espoo, Finland
  • Year and Date: 2015-07-27 – 2015-07-31
  • Int'l Joint Research
• [Presentation] Below-gap recombination channels in GaN revealed by two-wavelength excited photoluminescence (2015)
  • Author(s): M. Julkarnain, T. Fukuda, N. Kamata and Y. Arakawa
  • Organizer: Int. Conf. on Defects in Semiconductors (ICDS-2015)
  • Place of Presentation: Espoo, Finland
  • Year and Date: 2015-07-27 – 2015-07-31
• [Presentation] Trap centers and photostimulated-luminescence in Ba3Si6O12N2:Eu2+ phosphor revealed by below-gap excitation (2015)
  • Author(s): ・T. Li, Y. Kotsuka, N. Kamata, T. Fukuda, Z. Honda and T. Kurushima
  • Organizer: Int. Conf. on Defects in Semiconductors (ICDS-2015)
  • Place of Presentation: Espoo, Finland
  • Year and Date: 2015-07-27 – 2015-07-31
  • Int'l Joint Research
• [Presentation] Optical study on solution-processed organic thin films of energy donor-acceptor pair molecules (2015)
  • Author(s): N. Kamata, T. Ohtake, Y. Ishimaru and T. Fukuda
  • Organizer: Int. Conf. on Defects in Semiconductors (ICDS-2015)
  • Place of Presentation: Beijing, China
  • Year and Date: 2015-07-27 – 2015-07-31
  • Int'l Joint Research
• [Presentation] Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation, : A Mini Review of Two-Wavelength Excited Photolumineascemce (2015)
  • Author(s): N. Kamata and A. Z. M. T. Islam
  • Organizer: ICMEIE-2015
  • Place of Presentation: Rajshahi,Bangladesh
  • Year and Date: 2015-06-05 – 2015-06-06
  • Int'l Joint Research / Invited
• [Presentation] Progress of GaN-based THz Quantum Cascade Lasers (2015)
  • Author(s): H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
  • Organizer: Asian Pacific Workshop on Nitride Semiconductors (APWS 2015)
  • Place of Presentation: Seoul, Korea
  • Year and Date: 2015-05-17 – 2015-05-20
  • Int'l Joint Research / Invited
• [Book] 新編「照明専門講座テキスト」第31期 (2015)
  • Author(s): 鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介
  • Total Pages: 374 (2-1 ～ 2-19)
  • Publisher: 一般社団法人照明学会
• [Remarks] 鎌田研究室
  • URL: http://www.fms.saitama-u.ac.jp/lab/kamata_l/index.html