Study of desorption from MIS/MIM-structure devices induced by gate-voltage application toward catalysis reaction control

2015 Fiscal Year Final Research Report

• Project/Area Number: 25600100
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: HATTORI KEN 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (00222216)
• Research Collaborator: DAIMON Hiroshi ; HIROTA Nozomu
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 脱離 / 吸着 / 電子励起 / ホットキャリア / MOS構造 / 触媒

Outline of Final Research Achievements

Our original idea for the electronic devices controlling catalytic reactions is based on reactions induced by hot carriers (such as electrons or holes with higher energy), which conduct leakage current in MOS (evaporated Metal nano-thin-film layer, Oxide layer, and Semiconductor substrate) structures, and are generated by gate-voltage application; the electronic excitation of adsorbed molecules on the metal surface by the hot carriers leads to dissociate, associate and desorption reactions. In this study, for the first time we succeeded the demonstration of electronically excited desorption from a MOS surface by applying gate-voltages.

Free Research Field

表面科学