Intrinsic-stress-induced elastic instability of microscopic patterned materials and their morphology control

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630006
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Materials/Mechanics of materials
• Research Institution: The University of Tokyo
• Principal Investigator: TANAKA Hiro 東京大学, 工学(系)研究科(研究院), 助教 (70550143)
• Co-Investigator(Kenkyū-buntansha): IZUMI Satoshi 東京大学, 大学院工学系研究科, 教授 (30322069)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 半導体 / 微細パターン材 / 真性応力 / 板理論 / 座屈 / ドライエッチング / 分子動力学法

Outline of Final Research Achievements

The intrinsic stress at hetero interface is one of key factors to cause the structural instability of micropatterning in semiconductor devices and, in the field of engineering, it is essential to quantitatively predict the instability attributed to the intrinsic stress from the viewpoints of atomic and continuum scale. In this study, applying the plate theory, we first developed the prediction model for the lateral undulation buckling of micropatterning during dry etching and showed the validity of modeling to compare with the measurement data. Using a molecular dynamics method, we next constructed the atomic model of the dry etching and revealed that the compressive stress inside the oxidized film exceeds 1 GPa by simulating the oxidized film formation. We thus established the procedure of estimating buckling of micropatterning in terms of both the continuum and atomistic models.

Free Research Field

材料力学