Development of highly efficient and high precision figuring and finishing technique applying anodic oxidation for mold material made of SiC

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630026
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Production engineering/Processing studies
• Research Institution: Osaka University
• Principal Investigator: YAMAMURA Kazuya 大阪大学, 工学(系)研究科(研究院), 准教授 (60240074)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 陽極酸化 / 反応焼結SiC / 金型材料 / 形状修正 / 数値制御加工

Outline of Final Research Achievements

We proposed application of electrochemical mechanical polishing (ECMP), which is using a slurry as the electrolyte, for fabricating an ultraprecise glass lens mold made of reaction sintered silicon carbide (RS-SiC) material. RS-SiC is composed from SiC phase and Si phase, and SiC is easily oxidized anodically whereas Si is seldom oxidized. We have experimentally obtained optimal conditions in which oxidation rate of SiC and polishing rate of Si are same. By applying numerically controlled ECMP using optimal conditions for planarization of RS-SiC substrate, flatness and surface roughness are decreased from 808 nm to 184 nm and from 2.65 nm rms to 0.98 nm rms, respectively. Obtained result indicates that developed technique enables us to realize figure correction and smoothing of RS-SiC substrate simultaneously.

Free Research Field

超精密加工