2015 Fiscal Year Final Research Report
Epitaxial growth of Ge with low defect density on ultrathin Si layers
Project/Area Number |
25630121
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Electronic materials/Electric materials
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Research Institution | The University of Tokyo |
Principal Investigator |
Ishikawa Yasuhiko 東京大学, 工学(系)研究科(研究院), 准教授 (60303541)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Keywords | エピタキシャル / 結晶成長 / 電子・電気材料 / 格子欠陥 / 半導体物性 |
Outline of Final Research Achievements |
In order to realize epitaxial growth of Ge with a low defect density on SOI (Si-on-Insulator) wafers, Ge epitaxial growth was performed on SOI wafers having ultrathin and patterned top Si layers. A lattice relaxation took place, accompanying a surface roughening and a SiGe alloying, prior to the generation of dislocations in ultrathin Si patterns. Further investigations such as the growth at a reduced temperature are necessary to maintain the layered structures and realize Ge layers with a low dislocation density.
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Free Research Field |
半導体工学
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