Improvement of SiO2/SiC interface quality by beam induced interface reactions

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630124
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: WATANABE HEIJI 大阪大学, 工学(系)研究科(研究院), 教授 (90379115)
• Co-Investigator(Renkei-kenkyūsha): SHIMURA Takayoshi 大阪大学, 大学院工学研究科, 准教授 (90252600) ; HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 電子・電気材料 / パワーエレクトロニクス

Outline of Final Research Achievements

SiC has gained considerable attention as a promising material for next-generation power electronics due to its superior breakdown field and thermal conductivity over Si. Although SiC-MOSFETs provide normally-off characteristic, MOS devices have suffered from deteriorated interface properties leading to low channel mobility and poor reliability. In this study, we propose a novel method based on “beam induced MOS interface reactions” to overcome these problems. Impacts of single wavelength ultraviolet light and high-energy electron beam irradiation onto thermally-grown SiO2/SiC structures were examined in order to understand role of energetic beams for improving MOS interface quality. Moreover, physical origins of MOS interface defects were discussed on the basis of experimental findings.

Free Research Field

薄膜工学