On-demand entangled photon emission from nitrogen-delta doped GaAs

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630126
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Kobe University
• Principal Investigator: KITA Takashi 神戸大学, 工学(系)研究科(研究院), 教授 (10221186)
• Co-Investigator(Kenkyū-buntansha): HARADA Yukihiro 神戸大学, 大学院工学研究科, 助教 (10554355)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 薄膜・量子構造 / 不純物

Outline of Final Research Achievements

Localized electronic states with a substantial dipole moment is essential to build a quantum interface between photon and crystal. In particular, excitons bound with impurities in a semiconductor is equivalent to an ultimate quantum dot showing extremely uniform photoemission. In this work, we produce two-dimensionally ordered nitrogen centers utilizing a nitrogen delta-doping technique we developed. That enables to produce on-demand entangled photon emission at 0.85 micro-m optical communication band. Furthermore, with combining a micro-cavity structure, we develop a technology controlling photon radiation performance.

Free Research Field

半導体電子工学