Fabrication of Ferroelectric Nanorod Capacitors for Ultrahigh Integrated FeRAMs

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630130
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Hyogo
• Principal Investigator: SHIMIZU MASARU 兵庫県立大学, 工学(系)研究科(研究院), 教授 (30154305)
• Co-Investigator(Renkei-kenkyūsha): FUJISAWA Hironori 兵庫県立大学, 大学院工学研究科, 准教授 (30285340) ; NAKASHIMA Seiji 兵庫県立大学, 大学院工学研究科, 助教 (80552702)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 強誘電体 / ナノロッド / ナノワイヤ / ナノキャパシタ / 超高集積強誘電体メモリ / 有機金属気相成長法

Outline of Final Research Achievements

Ferroelectric　nanorod and nanowire capacitors were prepared by MOCVD (Metalorganic Chemical vapor Deposition) for ultrahigh integrated 3D ferroelectric random access memories (FeRAMs). At first stage, ZnO nanorods and nanowires as a positive template were fabricated on substrates using MOCVD. At second stage, ferroelectric Pb(Zr,Ti)O3 (PZT) or (Hf,Zr)O2 was deposited on ZnO nanorods (nanowires) using MOCVD. Finally, ZnO was deposited on them, and ZnO/PZT/ZnO and ZnO/(Hf,Zr)O2/ZnO nanorod (nanowire) capacitors were successfully fabricated. Selective growth of ZnO nanorods on patterned Pt was also successfully performed.

Free Research Field

薄膜電子材料工学