2013 Fiscal Year Final Research Report
CMOS Radiation Detector Using Arrayed Correlation
Project/Area Number |
25630139
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
OKADA Kenichi 東京工業大学, 理工学研究科, 准教授 (70361772)
|
Project Period (FY) |
2013-04-01 – 2014-03-31
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Keywords | 放射線センサ / SPAD / 発振器 |
Research Abstract |
In this work, a radiation detector using a CMOS chip has been studied. PET as a plastic scintillator generates ultraviolet light, and the light is detected by single-photon avalanche diode (SPAD) implemented on a CMOS chip. A bias voltage generation is very important to improve SPAD sensitivity. A SPAD array is self-calibrated for excluding defect-elements and having high bias voltage. A clock generation is also required to measure a dark count, and it is used for the calibration. A low-power and accurate on-chip clock generator is realized by using only standard cells.
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