Cr-based metal antiferromagnetic film applicable for high intergration spin devices

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630265
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Physical properties of metals/Metal-base materials
• Research Institution: Osaka University
• Principal Investigator: NAKATANI Ryoichi 大阪大学, 工学(系)研究科(研究院), 教授 (60314374)
• Co-Investigator(Kenkyū-buntansha): SHIRATSUCHI Yu 大阪大学, 大学院工学研究科, 准教授 (70379121)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: スピントロニクス / 反強磁性 / Cr

Outline of Final Research Achievements

We investigated the Cr-based antiferromagetic thin film which possesses the bcc-based crystal structure for the perpendicularly-magnetized spin valve film. In particular, we focused on the X-phase Cr3Al(001) thin film which is expected to possess the high magnetic moment and the high Neel temperature. Main results are (1) X-phase Cr3Al(001) epitaxial film grows on the MgO(001) substrate in the growth temperature range of 323 to 673 K and (2) the Au/Co/X-phase Cr3Al stacked films exhibit both perpendicular magnetic anisotropy and perpendicular exchange anisotropy.

Free Research Field

磁性材料