High-speed epitaxial growth of cubic SiC film by laser CVD

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630273
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tohoku University
• Principal Investigator: GOTO Takashi 東北大学, 金属材料研究所, 教授 (60125549)
• Co-Investigator(Kenkyū-buntansha): ITO Akihiko 東北大学, 金属材料研究所, 助教 (20451635) ; KATSUI Hirokazu 東北大学, 金属材料研究所, 助教 (70610202)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 炭化ケイ素 / 化学気相析出 / レーザー / 高速成膜 / 高配向

Outline of Final Research Achievements

Highly-oriented silicon carbide films were epitaxially grown at high deposition rates by laser chemical vapor deposition. The effects of CVD conditions on microstructure, oriented textures and deposition rates were investigated. The highly (111)-oriented 3C-SiC film was deposited at 200 μm/h, while the deposition rate of the (110)-oriented 3C-SiC film reached to 3600 μm/h.

Free Research Field

機能性セラミックス