Exploring of I-III-VI2 oxide semiconductors and their new functions

2014 Fiscal Year Final Research Report

• Project/Area Number: 25630283
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: Osaka University
• Principal Investigator: OMATA Takahisa 大阪大学, 工学(系)研究科(研究院), 准教授 (80267640)
• Co-Investigator(Renkei-kenkyūsha): OHASHI Naoki 物質, 材料研究機構, 部門長 (60251617) ; YANAGI Hiroshi 山梨大学, 医学工学総合研究部, 准教授 (30361794)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 半導体物性 / 光物性 / ナノ材料 / 先端機能デバイス

Outline of Final Research Achievements

Crystal structure of β-CuGaO2 was refined and its stability was evaluated using TG-DTA and high temperature XRD. Aa a result, this material is a metastable phase, but practically stable <300°C even under oxygen atmosphere. Impurity doping was attempted, and possibility of carrier injection by impurity doping was suggested. Based on the first principles density functional calculation, it was shown that β-CuGaO2 intensely absorb light around the fundamental absorption edge; therefore, it was shown that this material is a promising oxide semiconductor as a solar cell absorber.

Free Research Field

無機材料化学