Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constants

2015 Fiscal Year Final Research Report

• Project/Area Number: 25630293
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Composite materials/Surface and interface engineering
• Research Institution: Kyoto University
• Principal Investigator: ERIGUCHI Koji 京都大学, 工学(系)研究科(研究院), 准教授 (70419448)
• Co-Investigator(Kenkyū-buntansha): ONO Kouichi 京都大学, 大学院工学研究科, 教授 (30311731) ; TAKAO Yoshinori 横浜国立大学, 大学院工学研究院, 准教授 (80552661)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: プラズマ / 誘電率 / 欠陥 / 有機膜 / シリコン

Outline of Final Research Achievements

We focused on the defect generation process in dielectric films (SiOC films) by low pressure plasma exposures to realize future highly reliable organic devices. We proposed a method quantifying the density of defects created by the plasma exposure, employing the capacitance-voltage measurement of the dielectric films. It was clarified that the nano-scaled indentation modulus as well as the effective dielectric constant strongly depend on the plasma process condition. The interaction between the localized defects and the microwave irradiated were investigated. The present findings provide a key guideline for novel organic device designs in the future.

Free Research Field

プラズマ応用工学