Development of production process of high gas barrier films by plasma chemical vapor deposition

2015 Fiscal Year Final Research Report

• Project/Area Number: 25630357
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Reaction engineering/Process system
• Research Institution: Kyoto University
• Principal Investigator: KAWASE MOTOAKI 京都大学, 工学(系)研究科(研究院), 教授 (60231271)
• Co-Investigator(Kenkyū-buntansha): INOUE GEN 京都大学, 大学院工学研究科, 助教 (40336003)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: プラズマCVD / シリカ膜 / ヘキサメチルジシロキサン / キャリアガス / 膜組成 / 膜特性 / ガスバリア / 積層膜

Outline of Final Research Achievements

Silica films were produced by plasma chemical vapor deposition (PCVD) which posesses advantages of low deposition temperature, high gas barrier property and good adhesion. The Silica films were produced on PEN film from hexamethyldisiloxane (HMDSO). O2 and H2 were chosen as additive gas, and the effects of additive gas and depositing condition on the properties of the films were investigated.
The permeation cell with eliminating air leakage was designed, and a method for measuring gas permeability through the high gas barrier film was developed.
O2 permeability through polyethylene naphthalate (PEN) film and silica-based thin films was measured successfully.

Free Research Field

工学